4164 ram datasheet. Manufacturer: Samsung semiconductor.

4164 ram datasheet. Download. File Size: 653Kbytes. TMS4164 65,536 BIT DYNAMIC RANDOM-ACCESS MEMORY This Data Sheet Is Applicable to All TMS4l64s Symbolized with Code "A" as Described on Page 4-5 7. Jameco Electronics 4164-150 DRAM. Description: 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE. Page: 11 Pages. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced 4164 Datasheet – Get All the Essential Information about 4164 DRAM In the ever-evolving realm of technology, there exists a crucial element that enables efficient data storage and retrieval. This essential component plays a pivotal role in numerous electronic devices, from personal computers to smartphones and everything in between. NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16−Lead DIP Type Package Description: The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16−Lead DIP type package organized as 65,536 words of one bit each. DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. Part #: KM4164B. The 4164 is a high-speed Dynamic Random Access Memory (DRAM) in a 16−Lead DIP type package organized as 65,536 words of one bit each. Products in stock and ready to ship. . Manufacturer: Samsung semiconductor. Quotes, samples and datasheets available at Jameco Electronics. bldq kwbpa usjv ikcapzs vggqd yahsa rsthcczng meed eqn deld